Shrinking silicon transistors have reached their physical limits, but a team from the University of Tokyo is rewriting the rules. They've created a cutting-edge transistor using gallium-doped indium ...

Peking University transistor could outperform Intel, TSMC, and Samsung’s top silicon chips Full gate coverage boosts speed and cuts energy use in breakthrough Chinese transistor design China may have ...

For decades, the semiconductor industry has been laser-focused on shrinking silicon transistors, but Peking University researchers believe the future might lie in changing materials entirely. In a ...

Shrinking computers, faster phones, and smarter gadgets all rely on one tiny component: the transistor. Invented in the 20th century, it’s what powers nearly every modern electronic device.

As the industry advances into the angstrom era, gate-all-around architectures combined with atomic-scale materials ...

Nanoscale 3D transistors made from ultrathin semiconductor materials can operate more efficiently than silicon-based devices, leveraging quantum mechanical properties to potentially enable ...

If the claim is accurate, it would mean that China has bleeding-edge tech that could rival chips from Intel and TSMC. Share on Facebook (opens in a new window) Share on X (opens in a new window) Share ...

Why it matters: Silicon transistors are great, but just like any other object in the physical world, they are held back by a few limitations. The laws of physics put a bottleneck on performance and ...

Associate Professor Mario Lanza and his team demonstrated a groundbreaking silicon transistor that mimics neural and synaptic behaviours, marking a significant breakthrough in neuromorphic computing.

What just happened? A team of researchers at MIT, in collaboration with Georgia Tech and the Air Force Research Laboratory, has developed a new method for integrating gallium nitride (GaN) transistors ...