USING TRENCHFET Gen III silicon, the Si4628DY SkyFET from Vishay Intertechnology offers a maximum RDS(ON) of 3 m at a 10-V gate drive and 3.8 m at 4.5 USING TRENCHFET® Gen III silicon, the Si4628DY ...
Malvern, Pa. — Vishay Intertechnology, Inc. has released a single-chip power MOSFET and Schottky diode device that is said to improve operational efficiency by up to 6% in DC/DC conversion ...
Efficiency is often the most important factor when designing a power supply for many types of consumer and industrial applications including mobile phones, tablet and notebook computers, rechargeable ...
Automotive incandescent bulbs have largely given way to more efficient, reliable, stylish, and even safer light emitting diodes (LEDs). LEDs turn on in a fraction of the time and are especially useful ...
USING TRENCHFET® Gen III silicon, the Si4628DY SkyFET® from Vishay Intertechnology offers a maximum R DS(ON) of 3 mΩ at a 10-V gate drive and 3.8 mΩ at 4.5 V — presented as the industry's lowest ...
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