Inside every electronic device, the flow of electricity is controlled by a switch called a transistor. For decades, these ...
The next generation of microelectronics relies on radical improvements in transistor switching performance to advance ...
The next generation of microelectronics relies on radical improvements in transistor switching performance to advance ...
Unpacking the challenges with high-voltage power conversion and how SiC fits in. The pivotal advantages of SiC over traditional silicon in next-gen power converters. Rethinking circuit design for ...
What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...
A dual contact architecture with ultra-low-resistance contacts increases drive current and enables higher frequencies at ...
Can transistors switch below the conventional power limit without sacrificing useful current? A 2D device uses quantum ...
Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...