A technical paper titled “Process integration and future outlook of 2D transistors” was published by researchers at Intel Corporation. “The academic and industrial communities have proposed ...
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Researchers achieve breakthrough integration of 2D materials on standard silicon chips
Researchers at Fudan University have created a working memory chip just a few atoms thick, and the first to integrate 2D materials with standard silicon circuits.
Silicon carbide devices are displacing their incumbent silicon counterparts in several high-volume power applications. As SiC market share continues to grow, the industry is lifting the last barriers ...
A new methodology to assess the impact of fabrication inherent process variability on 14-nm fin field effect transistor (FinFET) device performance. August 18th, 2021 - By: Coventor A new methodology ...
In recent years, gallium nitride (GaN) has emerged as a compelling candidate to complement the silicon material used in wireless communication and power conversion applications. Benefits of GaN ...
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Researchers at Fudan University in Shanghai have developed the world's first fully functional memory chip made entirely from two-dimensional materials. The achievement, published in Nature, ...
The machine is built using the complementary metal-oxide-semiconductor (CMOS) chip fabrication process — the same used to create the chips for devices like smartphones, laptops and digital cameras.
POCATELLO, Idaho, Sept. 16, 2025 /PRNewswire/ -- LA Semiconductor LLC ("LA Semiconductor" or "the Company"), a US-owned, fully operational pure-play semiconductor foundry for analog, digital and mixed ...
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