High-voltage and high-power devices are critical for more efficient and sustainable high-power operations. One candidate for such next-generation devices is bipolar silicon carbide (SiC). SiC devices ...

Defects often limit the performance of devices such as light-emitting diodes (LEDs). The mechanisms by which defects annihilate charge carriers are well understood in materials that emit light at red ...

Researchers at Zhejiang University have found a way to stop performance-killing Auger recombination in perovskite lasers, using a clever additive during processing. Their method produced a ...

Defects often limit the performance of devices such as light-emitting diodes (LEDs). The mechanisms by which defects annihilate charge carriers are well understood in materials that emit light at red ...

For years, engineers have sought better ways to build tiny, efficient lasers that can be integrated directly onto silicon chips, a key step toward faster, more capable optical communications and ...

Quantum dots and semiconductor nanocrystals are nanoscale materials that exhibit distinctive optical and electronic properties due to quantum confinement effects. Their ability to emit light at ...

Bipolar high-voltage devices based on silicon carbide (SiC) have been earmarked as the next big step in the development of more efficient power systems. The efficiency of these devices is largely ...