Nanowerk

Novel dual-gate transistor design enables stable 3D semiconductor stacking

Researchers developed a dual-modulated vertically stacked transistor that eliminates current leakage at nanoscale channel lengths, advancing low-power 3D chip integration. (Nanowerk News) Researchers ...
Semiconductor Engineering

Free-Space Gated Transistor In Wide Bandgap And Ultra Wide Bandgap Semiconductors (KAUST Et Al.)

A new technical paper titled “Lateral Semiconductor–Free-Space Gate Transistors” was published by researchers at KAUST and the Indian Institute of Technology.
Compound Semiconductor

GaN-on-silicon HEMTs for tomorrow’s handsets?

A collaboration between A*STAR, Nanyang Technological University and Soitec is claiming to have broken new ground in the ...
TechSpot

Jensen Huang anticipates 20% performance boost from gate-all-around transistors

In brief: While covering a wide range of topics during his keynote at Nvidia's GTC, CEO Jensen Huang briefly touched on the company's GPU roadmap beyond the upcoming Rubin architecture. The Feynman ...
EurekAlert!

Study finds next-generation transistor performance inflated in most lab testing

For nearly two decades, two‑dimensional (2D) semiconductors have been studied as a complement or possible successor to silicon transistors, promising smaller, faster and more energy‑efficient ...
EurekAlert!

Tiny but mighty: sophisticated next-gen transistors hold great promise

Tokyo, Japan – Hailed as one of the greatest inventions of the 20 th century, transistors are integral components of modern electronics that amplify or switch electrical signals. As electronics become ...
Nanowerk

Tiny but mighty: sophisticated next-gen transistors hold great promise

Researchers produce tiny transistors with high performance and reliability through the use of an innovative material and design. (Nanowerk News) Hailed as one of the greatest inventions of the 20th ...