Developed to help simplify VCO module designs, the UPA861TD combines the companyÕs high performance NE894 oscillator chip with its NE687 buffer chip into a single miniature package. The twin ...

The silicon nanowire transistors have a hafnium-based dielectric layer separating the inner silicon wire from a gate-all-around polycrystalline silicon gate. The silicon wire was made with a range of ...

Back in 2012, I had the pleasure of visiting the IBM Watson research center. Among the people I talked with was George Tulevski, who was working on developing carbon nanotubes as a possible ...

Imec has used an optimised CMOS process to fabricate vertically stacked gate-all-around (GAA) silicon nanowire transistors in a functional ring oscillator. The demonstrator shows the enormous promise ...

The Class E power amplifier can be turned into an efficient, tuned-input, tuned-output (TITO) oscillator with the addition of a tuned circuit at its gate. The oscillator/amplifier has a power-added ...

where I DSS is the maximum saturation current and V P is the pinch-off voltage. You can model the JFET in this saturation zone in the small-signal regime using an infinite input impedance and a ...